Introducing high-density embedded flash memory technology implemented in a standard CMOS process. MoSys’s patented 1T-FLASH significantly improves the cost/performance/power trade-offs of embedding flash memory on systems on chips (SoCs), just as MoSys’s revolutionary 1T-SRAM
® does for embedded SRAM.
Unlike other high-density flash alternatives, 1T-FLASH is implemented in a pure logic CMOS process, offering better economies and easier scalability to smaller process nodes. MoSys 1T-FLASH IP is currently available at 130nm, with a roadmap to 65nm and below, as well as to larger geometries. 1T-FLASH likewise provides better performance than other high-density flash alternatives at equivalent geometries. It is currently available in high-speed versions up to 100Mhz at 130nm, compared to 33Mhz at equivalent geometries for competing solutions.
1T-FLASH is a NOR (random-access) flash technology, ideal for program memory in a wide variety of applications, including:
- PCs and peripherals
- Appliances
- Mobile devices (supports low-power implementations)
- Automotive/industrial (meets automotive/industrial standards for data retention in extreme environments)
Solutions for Every Need
MoSys offers its memory IP in a range of solutions tailored to different system requirements and customer needs. Choices include:
- Fully configurable macros pre-qualified at leading foundries—ideal for fabless semiconductor companies
- Customized application-oriented macros for fabless semis and integrated device manufacturers (IDMs)
- Licensed technology, allowing customers to customize their own embedded memory solutions, with support from MoSys. For example, IDMs can develop their own 1T-FLASH configurations or target 1T-FLASH to in-house process technologies.